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主動驅(qū)動條件下研磨軌跡均勻性的研
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of Kinematic Trajectory with Wafer Driving Initiatively in Plane Lapping Process
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    摘要:

    分析了主動驅(qū)動方式下平面研磨過程中工件的運動學(xué)特性,，提出了研磨軌跡均勻性可以通過單位面積軌跡點的數(shù)量及其標(biāo)準(zhǔn)差來評價,，理論分析了研磨盤和工件的轉(zhuǎn)速比和偏心距對軌跡均勻性的影響,。仿真表明,，偏心距越小越有利于工件表面研磨軌跡的均勻分布,，增大偏心距導(dǎo)致相對轉(zhuǎn)速線速度偏差增大,，不利于工件表面研磨軌跡的均勻分布。增大轉(zhuǎn)速比使加工軌跡分布稀疏，軌跡曲線點的標(biāo)準(zhǔn)差大,，加工均勻性差，研磨盤與工件具有相同的角速度時,，更有利于軌跡均勻性的提高,。

    Abstract:

    Kinematic characteristic of wafer driving initiatively in plane lapping process was analysised based on the model of lapping geometry. A new rule was deduced for evaluate the uniformity of lapping trajectory by trajectory numbers of each unit wafer area. The effects of rotating ratio and eccentricity on the uniformity of the lapping trajectory were theoretically analysed. Lower eccentricity is helpful to improve the trajectory uniform distribution, for the errors of the relative rotating speed are augmented with large eccentricity. Forever, improvement of rotating ratio is also to enlarge the standard deviation of trajectory points in the same area, and make a bad uniformity. The same angular velocity for lapping plate as wafer is recommended to improve the trajectory uniformity.

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盛繼生,文東輝,計時鳴.主動驅(qū)動條件下研磨軌跡均勻性的研[J].農(nóng)業(yè)機械學(xué)報,2010,41(4):209-212. of Kinematic Trajectory with Wafer Driving Initiatively in Plane Lapping Process[J]. Transactions of the Chinese Society for Agricultural Machinery,2010,41(4):209-212.

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